DIODE GEN PURP 100V 1A SMA S1B-13
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Description:
DIODE GEN PURP 100V 1A SMA
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Parameters
Capacitance at different Vr and F
Current - reverse leakage at different Vr
Current average rectification (Io)
Reverse recovery time (trr)
Standard recovery>500ns,> 200mA(Io)
Supplier device packaging
Voltage DC reverse (Vr) (maximum)
Voltage at different If - forward (Vf)
DataSheet
S1B-13(Diode rectifier)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64723,Price reference "real-time change" China/Hongkong。 S1B-13 package/specs, Download S1B-13、Datasheet。